Semiconducting B-C-N nanotubes with few layers

D. Golberg, P. Dorozhkin, Y. Bando, M. Hasegawa, Z. C. Dong

Результат исследований: Вклад в журналСтатьярецензирование

67 Цитирования (Scopus)

Аннотация

Perfectly ordered nanotubes (NTs) displaying a limited number of defect-free B-C-N shells (typically 2-4) were synthesized from CVD C NTs and a mixture of boron oxide and gold oxide placed in a flowing N2 atmosphere at ∼1950 K. The NTs were analyzed using field emission conventional and energy-filtered (Omega filter) high-resolution electron microscopes, and electron energy loss and energy dispersive X-ray spectrometers. NTs with inner diameters of 0.9-4.0 nm were frequently assembled in bundles consisting of several tubes and extending up to 1-2 μm in length. Two-terminal transport measurements on individual B-C-N nanotube bundles were carried out in-situ in a Fresnel projection microscope. The bundles displayed semiconducting behavior with an estimated band gap of ∼1 eV.

Язык оригиналаАнглийский
Страницы (с-по)220-228
Число страниц9
ЖурналChemical Physics Letters
Том359
Номер выпуска3-4
DOI
СостояниеОпубликовано - 20 июн. 2002
Опубликовано для внешнего пользованияДа

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