Quantum criticality in a mott pn junction in an armchair carbon nanotube

Wei Chen, A. V. Andreev, L. I. Glazman

Результат исследований: Вклад в журналСтатьярецензирование

Аннотация

In an armchair carbon nanotube pn junction the p and n regions are separated by a region of a Mott insulator, which can backscatter electrons only in pairs. We predict a quantum-critical behavior in such a pn junction. Depending on the junction's built-in electric field E, its conductance G scales either to zero or to 4e2/h as the temperature T is lowered. The two types of the G(T) dependence indicate the existence, at some special value of E, of an intermediate quantum-critical point with a finite conductance G<4e2/h. This makes the pn junction drastically different from a simple potential barrier in a Luttinger liquid.

Язык оригиналаАнглийский
Номер статьи216801
ЖурналPhysical Review Letters
Том106
Номер выпуска21
DOI
СостояниеОпубликовано - 23 мая 2011
Опубликовано для внешнего пользованияДа

Fingerprint

Подробные сведения о темах исследования «Quantum criticality in a mott pn junction in an armchair carbon nanotube». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать