Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures

M. V. Stepikhova, D. M. Zhigunov, V. G. Shengurov, V. Yu Timoshenko, L. V. Krasil'nikova, V. Yu Chalkov, S. P. Svetlov, O. A. Shalygina, P. K. Kashkarov, Z. F. Krasil'nik

Результат исследований: Вклад в журналСтатьярецензирование

9 Цитирования (Scopus)

Аннотация

Population inversion of the energy levels of Er3+ ions in Si/Si1 - xGex:Er/Si (x = 0.28) structures has been achieved due to electron excitation transfer from the semiconductor matrix. An analysis of the photoluminescence kinetics at a wavelength of 1.54 μm shows that up to 80% of the Er3+ ions are converted into excited states. This effect, together with the high photoluminescence intensity observed in the structures studied, shows good prospects for obtaining lasers compatible with planar silicon technology.

Язык оригиналаАнглийский
Страницы (с-по)494-497
Число страниц4
ЖурналJETP Letters
Том81
Номер выпуска10
DOI
СостояниеОпубликовано - 2005
Опубликовано для внешнего пользованияДа

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