Nanoscale structural damage due to focused ion beam milling of silicon with Ga ions

E. Salvati, L. R. Brandt, C. Papadaki, H. Zhang, S. M. Mousavi, D. Wermeille, A. M. Korsunsky

Результат исследований: Вклад в журналСтатьярецензирование

33 Цитирования (Scopus)

Аннотация

The exposure of sample to Focused Ion Beam leads to Ga-ion implantation, damage, material amorphisation, and the introduction of sources of residual stress; namely eigenstrain. In this study we employ synchrotron X-ray Reflectivity technique to characterise the amorphous layer generated in a single crystal Silicon sample by exposure to Ga-ion beam. The thickness, density and interface roughness of the amorphous layer were extracted from the analysis of the reflectivity curve. The outcome is compared with the eigenstrain profile evaluated from residual stress analysis by Molecular Dynamics and TEM imaging reported in the literature.

Язык оригиналаАнглийский
Страницы (с-по)346-349
Число страниц4
ЖурналMaterials Letters
Том213
DOI
СостояниеОпубликовано - 15 февр. 2018
Опубликовано для внешнего пользованияДа

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