Graphene oxide reduction by solid-state laser irradiation for bolometric applications

Vladislav A. Kondrashov, Nikolay S. Struchkov, Roman Yu Rozanov, Vladimir K. Nevolin, Daria S. Kopylova, Albert G. Nasibulin

    Результат исследований: Вклад в журналСтатьярецензирование

    10 Цитирования (Scopus)

    Аннотация

    We present a method for reduced graphene oxide (GO) patterning on the surface of GO film by a 445 nm solid-state laser with the adjustable fluence from 0.2-20 kJ cm-2. We demonstrate that the optimal argon concentration in air to obtain good quality reduced GO films is 90%. Varying the laser irradiation energy density allows controlling the resistance and I G/I D and I G/I 2D ratios of Raman peak intensities. As a result, we demonstrate the possibility of forming of conductive patterns with a sheet resistance of 189 Ohm/□ and ∼1 μm film thickness by a local reduction of the GO. The fabricated structures reveal excellent bolometric response with a high speed and sensitivity to the radiation in the visible wavelength region.

    Язык оригиналаАнглийский
    Номер статьи035301
    ЖурналNanotechnology
    Том29
    Номер выпуска3
    DOI
    СостояниеОпубликовано - 19 янв. 2018

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