Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors

D. Beliaev, L. M.R. Scolfaro, J. R. Leite, G. M. Sipahi

Результат исследований: Вклад в журналСтатьярецензирование

1 Цитирования (Scopus)

Аннотация

A method to calculate the exchange-correlation potential for the homogeneous and inhomogeneous heavy and light hole gases is described. We present the results for the homogeneous hole gas of the diamond and zincblende type semiconductors. Due to the spin-mixed character of hole states, the exchange interaction also takes place between holes of different types. The exchange potentials depend on the mixture ratio between heavy and light holes. We study a decomposition of the exchange potentials into two parts representing the interaction between the holes of different types and the interaction between the holes of the same type. Exchange potentials of heavy holes are plotted versus heavy hole densities for various light hole concentrations.

Язык оригиналаАнглийский
Страницы (с-по)777-781
Число страниц5
ЖурналPhysica Status Solidi (B) Basic Research
Том210
Номер выпуска2
DOI
СостояниеОпубликовано - дек. 1998
Опубликовано для внешнего пользованияДа

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