Electronic structure of advanced materials studied by X-ray emission spectroscopy

E. Z. Kurmaev, V. R. Galakhov, Yu M. Yarmoshenko, V. A. Trofimova, S. N. Shamin, V. M. Cherkashenko, A. I. Poteryaev, V. I. Anisimov

Результат исследований: Вклад в журналСтатьярецензирование


High resolution soft X-ray emission spectroscopy with high spatial resolution is used to study the electronic structure and to characterize advanced materials: high-Tc superconductors, transition metal compounds, porous silicon, solid-solid buried interfaces and hard materials. In high-Tc, the main attention is focused on the analysis of oxygen-cation interactions and the determination of the location of impurity atoms. In transition metal compounds the participation of different electronic states of constituent atoms in the valence band is analyzed and correctness of LDA band structure calculations is estimated. For CuFeO2 unusual mutual position of the Cu3d and Fe3d bands was found which is attributed to strong electron-electron correlations. In porous silicon the local structure of silicon atoms was found to depend on the type of doping of the initial Si wafer. Solid-solid buried interfaces in thin semiconducting films irradiated by excimer laser were investigated. For the hard materials boron-carbonitride a structure consisting of hexagonal lattice planes of carbon and boron nitride is proposed.

Язык оригиналаАнглийский
Страницы (с-по)637-649
Число страниц13
ЖурналSurface Investigation X-Ray, Synchrotron and Neutron Techniques
Номер выпуска4-5
СостояниеОпубликовано - 1998
Опубликовано для внешнего пользованияДа


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