Effect of high-frequency pumping on thin-film topological insulators

A. A. Pervishko, D. Yudin, I. A. Shelykh

Результат исследований: Вклад в журналСтатья конференциирецензирование

Аннотация

Thin-film topological insulators (TIs) with the thickness below 10 nm are characterized by the presence of a gap in the spectrum of topologically protected surface states. This unusual behavior, also known as anomalous finite size effects, is associated with the hybridization between the states propagating along the opposite boundaries of thin-slab TI. In this work we consider a bismuth-based TI and show how an intense high-frequency linearly polarized light can be used for the tuning of the value of a gap. We also theoretically predict the effect of band inversion in the spectrum of the surface states under external electromagnetic pumping.

Язык оригиналаАнглийский
Номер статьи012114
ЖурналJournal of Physics: Conference Series
Том1092
DOI
СостояниеОпубликовано - 2018
Опубликовано для внешнего пользованияДа
Событие3rd International Conference on Metamaterials and Nanophotonics, METANANO 2018 - Sochi, Российская Федерация
Продолжительность: 17 сент. 201821 сент. 2018

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