Atomic force microscopy has been applied to investigate morphology of a stepped silicon surface after sublimation, thermal oxygen etching, and oxidation. Silicon surface was treated under the conditions of step bunching to fabricate large step-free areas. Consecutive stages of structural transformations induced by the interaction of oxygen molecules with the silicon surface were visualized. Peculiarities of adatoms and vacancies behavior on the large step-free area were analyzed.
|Журнал||Physics of Low-Dimensional Structures|
|Состояние||Опубликовано - 2002|
|Опубликовано для внешнего пользования||Да|