Zero-bias Schottky diode based THz detectors at room temperature using metallic nanowire

Ahid S. Hajo, Shihab Al-Daffaie, Oktay Yilmazoglu, Mohammad Tanvir Haidar, Franko Kuppers

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

We present new kind of terahertz (THz) Schottky detectors based on high-doped GaAs and AlGaAs/GaAs high electron mobility transistor (HEMT) structure using silver (Ag) metallic nanowires (NWs) with different diameters as air-bridge contact between the antenna and Schottky anode. The dielectrophoresis allows a simple alignment of the NWs and fabrication of submicron anode contacts with high cut-off frequency as well as electric field enhancement at the Schottky contact for zero-bias operation. Furthermore, these metallic NWs can be integrated with semiconductor NWs for large scale, low cost THz detectors on any substrate, for example for security imaging application.

Original languageEnglish
Title of host publication41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016
PublisherIEEE Computer Society
ISBN (Electronic)9781467384858
DOIs
Publication statusPublished - 28 Nov 2016
Externally publishedYes
Event41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016 - Copenhagen, Denmark
Duration: 25 Sep 201630 Sep 2016

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume2016-November
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Conference

Conference41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016
Country/TerritoryDenmark
CityCopenhagen
Period25/09/1630/09/16

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