Zero-bias anomaly in disordered wires

E. G. Mishchenko, A. V. Andreev, L. I. Glazman

Research output: Contribution to journalArticlepeer-review

55 Citations (Scopus)


We calculate the low-energy tunneling density of states ν(ε, T) of an N-channel disordered wire, taking into account the electron-electron interaction nonperturbatively. The finite scattering rate 1/τ results in a crossover from the Luttinger liquid behavior at higher energies, ν∝εα, to the exponential dependence ν(ε, T = 0) ∝ exp(ε*/ε) at low energies, where ε * ∝ 1/(Nτ). At finite temperature T, the tunneling density of states depends on the energy through the dimensionless variable ε/√ε*T. At the Fermi level ν(ε = 0, T) ∝ (− √ε*/t).

Original languageEnglish
Article number246801
Pages (from-to)246801-1-246801-4
Number of pages4
JournalPhysical Review Letters
Issue number24
Publication statusPublished - 10 Dec 2001
Externally publishedYes


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