X-ray reflectivity and photoelectron spectroscopy of superlattices with silicon nanocrystals

D. M. Zhigunov, I. A. Kamenskikh, A. M. Lebedev, R. G. Chumakov, Yu A. Logachev, S. N. Yakunin, P. K. Kashkarov

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The structural properties and features of the chemical composition of SiOxNy/SiO2, SiOxNy/Si3N4, and SiNx/Si3N4 multilayer thin films with ultrathin (1–1.5 nm) barrier SiO2 or Si3N4 layers are studied. The films have been prepared by plasma chemical vapor deposition and have been annealed at a temperature of 1150°С for the formation of silicon nanocrystals in the SiOxNy or SiNx silicon-rich layers with a nominal thickness of 5 nm. The period of superlattices in the studied samples has been estimated by X-ray reflectivity. The phase composition of superlattices has been studied by X-ray electron spectroscopy using the decomposition of photoelectron spectra of the Si 2p, N 1s, and O 1s levels into components corresponding to different charge states of atoms.

Original languageEnglish
Pages (from-to)517-521
Number of pages5
JournalJETP Letters
Volume106
Issue number8
DOIs
Publication statusPublished - 1 Oct 2017
Externally publishedYes

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