Widely tunable, polarization stable BCB MEMS VCSELs with SWG integration based on InP at 1.55 μm

T. Gruendl, K. Zogal, P. Debernardi, C. Grasse, K. Geiger, G. Boehm, R. Meyer, M. C. Amann, P. Meissner, F. Kueppers

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

Polarization stable MEMS VCSEL devices based on InP with SWG are presented. They show tuning ranges of 23nm, 1mW optical output power, Ith of 3mA and a polarization suppression ratio around 20dB.

Original languageEnglish
Article number6348325
Pages (from-to)42-43
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event23rd IEEE International Semiconductor Laser Conference, ISLC 2012 - San Diego, CA, United States
Duration: 7 Oct 201210 Oct 2012

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