Weak antilocalization in a 2D electron gas with chiral splitting of the spectrum

M. A. Skvortsov

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

Motivated by the recent observation of the metal-insulator transition in Si MOSFETs, a study is made of the quantum interference correction to the conductivity in the presence of the Bychkov-Rashba spin splitting. For a small splitting, a crossover from the localizing to antilocalizing regime is obtained. The antilocalization correction vanishes, however, in the limit of a large separation between the chiral branches. The relevance of the chiral splitting for the 2D electron gas in Si MOSFETs is discussed.

Original languageEnglish
Pages (from-to)133-139
Number of pages7
JournalJETP Letters
Volume67
Issue number2
DOIs
Publication statusPublished - 1998
Externally publishedYes

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