Voltage-Controlled Anisotropy and Current-Induced Magnetization Dynamics in Antiferromagnetic-Piezoelectric Layered Heterostructures

P. A. Popov, A. R. Safin, A. Kirilyuk, S. A. Nikitov, I. Lisenkov, V. Tyberkevich, A. Slavin

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

It is shown theoretically that in a layered heterostructure comprising piezoelectric, dielectric antiferromagnetic crystal, and heavy metal (PZ/AFM/HM), it is possible to control the anisotropy of the AFM layer by applying a dc voltage across the PZ layer. In particular, we show that by varying the dc voltage across the heterostructure and/or the dc current in the HM, it is possible to vary the frequency of the antiferromagnetic resonance of the AFM in a passive (subcritical) regime and, also, to reduce the threshold of the current-induced terahertz-frequency generation. Our analysis also shows that, unfortunately, the voltage-induced reduction of the generation threshold leads to the proportional reduction of the amplitude of the terahertz-frequency signal generated in the active (supercritical) regime. The general results are illustrated by a calculation of the characteristics of experimentally realizable PZT-5H/NiO/Pt.

Original languageEnglish
Article number044080
JournalPhysical Review Applied
Volume13
Issue number4
DOIs
Publication statusPublished - Apr 2020
Externally publishedYes

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