Vertical nanowire contacted THz Schottky detectors based on gallium arsenide for zero-bias operation

Ahid S. Hajo, Oktay Yilmazoglu, Franko Kuppers

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Citations (Scopus)

Abstract

We report a new fully integrated THz Schottky detector based on vertically contacted high doped (1 · 1018/cm3) gallium arsenide (GaAs) by using a small diameter (100 nm) silver nanowire (NW) as air-bridge contact. Compared to Schottky diodes with evaporated metal contact it has lower capacitance (0.5 fF) for a high cut-off frequency as well as better zero-bias operation for a lower noise value.

Original languageEnglish
Title of host publication2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017
PublisherIEEE Computer Society
ISBN (Electronic)9781509060481
DOIs
Publication statusPublished - 12 Oct 2017
Externally publishedYes
Event42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017 - Cancun, Quintana Roo, Mexico
Duration: 27 Aug 20171 Sep 2017

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Conference

Conference42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017
Country/TerritoryMexico
CityCancun, Quintana Roo
Period27/08/171/09/17

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