UV laser-induced spatially selective deep oxidation of GaAs

I. A. Salimon, A. Averchenko, P. G. Lagoudakis, S. Mailis

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

UV laser-induced surface oxidization and spontaneous periodic surface patterning of monocrystalline GaAs wafers is presented here. Irradiation of the semiconductor's (100) surface with UV laser radiation (244 nm) in ambient conditions results in the formation of regular periodic surface structures, known as laser-induced periodic surface structures (LIPSS). At the higher end of the irradiation intensities used in our experiments the periodic oxide features merge to form a continuous porous oxide layer with a thickness of ~0.4 µm.

Original languageEnglish
Title of host publication2021 Conference on Lasers and Electro-Optics, CLEO 2021 - Proceedings
Subtitle of host publicationQELS_Fundamental Science, CLEO: QELS 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580910
Publication statusPublished - 2021
Event2021 Conference on Lasers and Electro-Optics, CLEO 2021 - Virtual, Online, United States
Duration: 9 May 202114 May 2021

Publication series

Name2021 Conference on Lasers and Electro-Optics, CLEO 2021 - Proceedings

Conference

Conference2021 Conference on Lasers and Electro-Optics, CLEO 2021
Country/TerritoryUnited States
CityVirtual, Online
Period9/05/2114/05/21

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