UV laser induced poling inhibition (PI) is a method for domain engineering in ferroelectric lithium niobate crystals. This method is capable of producing localised ferroelectric domains whose shape and orientation is defined by a UV laser pre-irradiated pattern. Poling inhibition is observed at the locations of the +z face of the crystal that have been exposed to UV laser radiation (244 nm-305 nm) prior to uniform domain inversion by electric field poling at room temperature .
|Publication status||Published - 2013|
|Event||2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 - Munich, Germany|
Duration: 12 May 2013 → 16 May 2013
|Conference||2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013|
|Period||12/05/13 → 16/05/13|