UV laser-induced poling inhibited domain building blocks for photonic and nonlinear optical microstructures

G. Zisis, C. Y.J. Ying, E. Soergel, S. Mailis

Research output: Contribution to conferencePaperpeer-review

Abstract

UV laser induced poling inhibition (PI) is a method for domain engineering in ferroelectric lithium niobate crystals. This method is capable of producing localised ferroelectric domains whose shape and orientation is defined by a UV laser pre-irradiated pattern. Poling inhibition is observed at the locations of the +z face of the crystal that have been exposed to UV laser radiation (244 nm-305 nm) prior to uniform domain inversion by electric field poling at room temperature [1].

Original languageEnglish
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 - Munich, Germany
Duration: 12 May 201316 May 2013

Conference

Conference2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013
Country/TerritoryGermany
CityMunich
Period12/05/1316/05/13

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