Universal Scaling of Intrinsic Resistivity in Two-Dimensional Metallic Borophene

Jin Zhang, Jia Zhang, Liujiang Zhou, Cai Cheng, Chao Lian, Jian Liu, Sergei Tretiak, Johannes Lischner, Feliciano Giustino, Sheng Meng

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

Two-dimensional boron sheets (borophenes) have been successfully synthesized in experiments and are expected to exhibit intriguing transport properties. A comprehensive first-principles study is reported of the intrinsic electrical resistivity of emerging borophene structures. The resistivity is highly dependent on different polymorphs and electron densities of borophene. Interestingly, a universal behavior of the intrinsic resistivity is well-described using the Bloch–Grüneisen model. In contrast to graphene and conventional metals, the intrinsic resistivity of borophenes can be easily tuned by adjusting carrier densities, while the Bloch–Grüneisen temperature is nearly fixed at 100 K. This work suggests that monolayer boron can serve as intriguing platform for realizing tunable two-dimensional electronic devices.

Original languageEnglish
Pages (from-to)4585-4589
Number of pages5
JournalAngewandte Chemie - International Edition
Volume57
Issue number17
DOIs
Publication statusPublished - 16 Apr 2018
Externally publishedYes

Keywords

  • Bloch–Grüneisen model
  • borophene
  • electron–phonon coupling
  • intrinsic electrical resistivity

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