Tunable topological states in electron-doped HTT-Pt

Xiaoming Zhang, Zhenhai Wang, Mingwen Zhao, Feng Liu

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)

Abstract

Modulating topologically nontrivial states in trivial materials is of both scientific and technological interest. Using first-principles calculations, we propose a demonstration of electron-doping- (or gate-voltage-) induced multiple quantum states; namely, quantum spin Hall (QSH) and quantum anomalous Hall (QAH) states, in a single material of the organometallic framework (HTT-Pt) synthesized from triphenylene hexathiol molecules (HTT) and PtCl2. At a low doping level, the trivial HTT-Pt converts to a QSH insulator protected by time-reversal symmetry (TRS). When the electronic doping concentration is further increased, TRS will be broken, making the HTT-Pt a QAH insulator. The band gaps of these topologically nontrivial states can be as large as 42.5 meV, suggesting robustness at high temperatures. The possibility of switching between the QSH and QAH states offers an intriguing platform for a different device paradigm by interfacing between QSH and QAH states.

Original languageEnglish
Article number165401
JournalPhysical Review B
Volume93
Issue number16
DOIs
Publication statusPublished - 1 Apr 2016
Externally publishedYes

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