Tunable MEMS-VCSEL with >140-nm tuning range using tuning range using SiO2/SiC-based MEMS-DBR

Christian Gierl, Karolina Zogal, Sujoy Paul, Franko Küppers

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Citations (Scopus)


With the use of SiO2/SiC based movable MEMS-DBR, the continuous tuning range of electrically pumped MEMS-VCSEL can be extended to > 140 nm. The high refractive index contrast of Δn > 1 between SiO2 and SiC reduces the needed number of layers (11 layers) and broadens the spectral width of the reflectivity (448nm for R > 99.5 %) by more than a factor of two compared to the material system SiO2/Si 3N4 (23 layers / 216nm for R > 99.5 %), which has been used for the current world record continuous tuning range of 100nm of an electrically pumped MEMS-VCSEL. The smaller number of needed DBR-layers enables a significant reduction of the overall mirror thickness, which enables a further miniaturization of the device and thus an increase of the free spectral range (FSR), the ultimate limit for continuous wavelength tuning. In this paper we evaluate the performance advantages of using SiO2/SiC based MEMS-DBR for tunable VCSEL by using Transfer-matrix method simulations.

Original languageEnglish
Title of host publicationVertical-Cavity Surface-Emitting Lasers XVIII
ISBN (Print)9780819499141
Publication statusPublished - 2014
Externally publishedYes
EventVertical-Cavity Surface-Emitting Lasers XVIII - San Francisco, CA, United States
Duration: 5 Feb 20146 Feb 2014

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceVertical-Cavity Surface-Emitting Lasers XVIII
Country/TerritoryUnited States
CitySan Francisco, CA


  • high-temperature operation
  • MEMS
  • surface micro-machining
  • Tunable VCSEL


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