Tunable electronic structures of graphene/boron nitride heterobilayers

Yingcai Fan, Mingwen Zhao, Zhenhai Wang, Xuejuan Zhang, Hongyu Zhang

Research output: Contribution to journalArticlepeer-review

197 Citations (Scopus)


Using first-principles calculations, we show that the band gap and electron effective mass (EEM) of graphene/boron nitride heterobilayers (C/BN HBLs) can be modulated effectively by tuning the interlayer spacing and stacking arrangement. The HBLs have smaller EEM than that of graphene bilayers (GBLs), and thus higher carrier mobility. For specific stacking patterns, the nearly linear band dispersion relation of graphene monolayer can be preserved in the HBLs accompanied by a small band-gap opening. The tunable band gap and high carrier mobility of these C/BN HBLs are promising for building high-performance nanodevices.

Original languageEnglish
Article number083103
JournalApplied Physics Letters
Issue number8
Publication statusPublished - 21 Feb 2011
Externally publishedYes


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