Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality

A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maximov, D. A. Sannikov, T. F. Yagafarov, A. E. Zhukov

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    2 Citations (Scopus)

    Abstract

    Abstract: The time-resolved photoluminescence of quantum-confined InGaAs heterostructures grown on GaAs substrates is studied by time-correlated single photon counting. The heterostructures have different dimensionalities: the structures are formed as quantum dots, quantum wells, and structures of transition dimensionality (quantum well-dots). It is found that the room-temperature photoluminescence decay time of the samples substantially depends on their dimensionality and corresponds to 6, 7, and >20 ns for quantum dots, well-dots, and wells, respectively. It is thought that the presence of localization centers for charge carriers can be responsible for the experimentally observed shortening of the photoluminescence time in the heterostructures.

    Original languageEnglish
    Pages (from-to)1489-1495
    Number of pages7
    JournalSemiconductors
    Volume53
    Issue number11
    DOIs
    Publication statusPublished - 1 Nov 2019

    Keywords

    • photoluminescence
    • quantum-confined structures
    • time resolution

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