The structure and morphology of Si (111) surface at the initial stages of high temperature copper deposition

Dmitry I. Rogilo, Sergey S. Kosolobov, Ludmila I. Fedina, Alexander V. Latyshev

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

Structural and morphological transformations of an atomically clean Si(111) surface at initial stages of copper deposition were studied by in situ ultrahighvacuum reflection electron microscopy. The monatomic steps motion in the step-down direction and the change of the electron microscopy contrast along atomic steps were observed during the submonolayer copper deposition onto the substrate at 850°C. It was shown that the change of the contrast was caused by the formation of Cu/Si(111)-(5x5) reconstruction domains and the shift of monatomic steps was provided by the incorporation of silicon adatoms been generated during the formation of the superstructure.

Original languageEnglish
Title of host publication2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices, EDM 2009
Pages48-50
Number of pages3
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices, EDM 2009 - Novosibirsk, Russian Federation
Duration: 1 Jul 20096 Jul 2009

Publication series

NameInternational Workshop and Tutorials on Electron Devices and Materials, EDM - Proceedings
ISSN (Print)1815-3712

Conference

Conference2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices, EDM 2009
Country/TerritoryRussian Federation
CityNovosibirsk
Period1/07/096/07/09

Keywords

  • Atomic steps
  • Copper
  • Silicon
  • Superstructure

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