The kinetics of negative 2D-islands on Si (111) surface during sublimation

Sergey V. Sitnikov, Sergey S. Kosolobov, Alexander V. Latyshev

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Kinetics of two dimensional islands on Si(111) was investigated by in situ ultrahighvacuum reflection electron microscopy during sublimation. The temperature dependences of critical radius of the terrace for nucleation of new island were measured. On the base of the obtained data the adatom diffusion length on the Si(111) surface was estimated at temperature range 1000-1300°C.

Original languageEnglish
Title of host publication2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices, EDM 2009
Pages56-58
Number of pages3
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices, EDM 2009 - Novosibirsk, Russian Federation
Duration: 1 Jul 20096 Jul 2009

Publication series

NameInternational Workshop and Tutorials on Electron Devices and Materials, EDM - Proceedings
ISSN (Print)1815-3712

Conference

Conference2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices, EDM 2009
Country/TerritoryRussian Federation
CityNovosibirsk
Period1/07/096/07/09

Keywords

  • Migration length
  • Silicon (111)
  • Sublimation
  • Two dimensional island

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