The influence of structural defects on the electronic properties of interstitial alloys-I. Lattice vacancies

A. L. Ivanovsky, V. I. Anisimov, D. L. Novikov, A. I. Lichtenstein, V. A. Gubanov

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)

Abstract

With the use of the LMTO-Green's Function method a study was made of the electronic states of non-metal and metal vacancies in refractory interstitial alloys: TiC, TiN, TiO, VC, VN, VO. It is established that the generation of lattice defects is accompanied by the formation of filled vacancy states in the energy spectrum of nonstoichiometric compounds. Changes in binary alloy electronic properties vs defect concentration are discussed. Processes of rearrangement of local interatomic bonds near vacancies are analyzed based on the results of cluster Xα DV calculations.

Original languageEnglish
Pages (from-to)465-477
Number of pages13
JournalJournal of Physics and Chemistry of Solids
Volume49
Issue number5
DOIs
Publication statusPublished - 1988
Externally publishedYes

Keywords

  • electronic properties
  • Interstitial alloys
  • vacancies

Fingerprint

Dive into the research topics of 'The influence of structural defects on the electronic properties of interstitial alloys-I. Lattice vacancies'. Together they form a unique fingerprint.

Cite this