Suspended single-electron transistor as a detector of its nanomechanical motion

Yuri Pashkin, Tiefu Li, Jukka Pekola, Oleg Astafiev, Dmitry Knyazev, Felix Hoehne, Hyunsik Im, Yasunobu Nakamura, Jaw Shen Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have fabricated an Al based single-electron transistor transistor (SET) whose island is suspended above the substrate. The structure can be considered as a two-in-one device containing a doubly clamped beam and a transducer that converts mechanical vibrations into variations in the SET current. In addition to the regular side gate, a bottom gate with a large capacitance, is placed beneath the SET island for increasing the SET coupling to the mechanical motion. The observed response is reproduced in our simulations, which are based on the orthodox model that considers the fundamental flexural mode of the resonating SET island.

Original languageEnglish
Title of host publicationICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology
Pages340-342
Number of pages3
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2010 3rd International Conference on Nanoscience and Nanotechnology, ICONN 2010 - Sydney, NSW, Australia
Duration: 22 Feb 201026 Feb 2010

Publication series

NameICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology

Conference

Conference2010 3rd International Conference on Nanoscience and Nanotechnology, ICONN 2010
Country/TerritoryAustralia
CitySydney, NSW
Period22/02/1026/02/10

Keywords

  • Doubly clamped beam
  • Nanomechanical resonator
  • Single-electron transistor
  • Transducer

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