Suppressing twin domains in molecular beam epitaxy grown Bi2Te3 topological insulator thin films

Jörn Kampmeier, Svetlana Borisova, Lukasz Plucinski, Martina Luysberg, Gregor Mussler, Detlev Grützmacher

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)

Abstract

The structural perfection of the topological insulator (TI) Bi2Te3 is a key issue for its employment in future device applications. State of the art TIs, featuring exotic electronic properties, predominantly suffer from structural defects such as twin domains. A suppression of such domains in molecular beam epitaxy-grown Bi2Te3 thin films on Si(111) substrates - measured by X-ray diffraction pole figure scans - is presented in this paper. A numerical analysis of van der Waals potentials was performed, revealing the nucleation collinear with the Si(311) reflections of the Si(111) substrate to be energetically preferred.

Original languageEnglish
Pages (from-to)390-394
Number of pages5
JournalCrystal Growth and Design
Volume15
Issue number1
DOIs
Publication statusPublished - 7 Jan 2015
Externally publishedYes

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