Study of radiation defects annealing in lithium doped n-Si

N. V. Brilliantov, V. V. Zverev, Yu V. Scherbakov

Research output: Contribution to journalArticlepeer-review

Abstract

Radiation defect annealing processes investigated for MeV electron irradiated lithium-doped n-type silicon Multistage-annealing model is proposed. Identification of new deep levels Ec-0,36eV and Ev+0,30 eV, which appeared during annealing is made on base of this model.

Original languageEnglish
Pages (from-to)26-31
Number of pages6
JournalFizika i Khimiya Obrabotki Materialov
Issue number1
Publication statusPublished - Jan 1993
Externally publishedYes

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