Study of p-type contact topography influence on characteristics of microdisk and microring lasers

A. S. Novikov, E. I. Moiseev, N. V. Kryzhanovskaya, B. I. Afinogenov, Y. A. Guseva, K. Kotlyar, A. A. Lipovskii, A. G. Nasibulin, M. V. Maximov, V. G. Tikhomirov, A. E. Zhukov

    Research output: Contribution to journalConference articlepeer-review

    3 Citations (Scopus)

    Abstract

    The results are presented for injection microlasers with InAs/InGaAs self-organized quantum dot active region grown on a GaAs substrate. Lasing wavelength is around 1.26⋯1.28 μm. It is demonstrated that the use of ring-shaped p-contact for microdisk quantum dot lasers provides lowering the threshold current as compared to that of conventional microdisk lasers with round-shaped contact topology. Both spectral characteristics and thermal resistance are preserved, whereas the series electrical resistance slightly increases.

    Original languageEnglish
    Article number041012
    JournalJournal of Physics: Conference Series
    Volume1124
    Issue number4
    DOIs
    Publication statusPublished - 2018
    Event5th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Saint Petersburg OPEN 2018 - St. Petersburg, Russian Federation
    Duration: 2 Apr 20185 Apr 2018

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