Strong anisotropy of lateral electrical transport in (110) porous silicon films

P. Forsh, D. Zhigunov, L. Osminkina, V. Timoshenko, P. Kashkarov

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We study the lateral electrical transport in free-standing porous silicon films prepared by anodic etching of heavily boron-doped (110) Si wafers. It is shown that the lateral dark conductivity and photoconductivity are significantly higher along the [110] in-plane crystallographic direction than that along the [001] one. The electrical transport anisotropy decreases under light illumination and with increasing temperature. The experimental results are explained by using an effective-medium approximation and taking into account potential barriers between anisotropic Si nanocrystals assembling the films.

Original languageEnglish
Pages (from-to)3404-3408
Number of pages5
JournalPhysica Status Solidi C: Conferences
Volume2
Issue number9
DOIs
Publication statusPublished - 2005
Externally publishedYes

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