Strain-Engineered Ge Embedded into Microresonators as an Active Media for Si Photonics

Sergey A. Dyakov, Nikita S. Gusev, Zakhariy F. Krasil'nik, Alexey V. Nezhdanov, Alexey V. Novikov, Evgeny V. Skorokhodov, Valeriy A. Verbus, Artem N. Yablonskiy, Dmitry V. Yurasov

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    Optical properties of tensile strained n-doped Ge microstructures were investigated. Formation of microresonators based on Bragg reflectors and photonic crystals were implemented for such kind of active medium and opportunities to employ them for fabrication of efficient Si-compatible light sources were discussed.

    Original languageEnglish
    Title of host publicationGFP 2019 - Group IV Photonics
    PublisherIEEE Computer Society
    ISBN (Electronic)9781728109053
    DOIs
    Publication statusPublished - Aug 2019
    Event16th IEEE International Conference on Group IV Photonics, GFP 2019 - Singapore, Singapore
    Duration: 28 Aug 201930 Aug 2019

    Publication series

    NameIEEE International Conference on Group IV Photonics GFP
    Volume2019-August
    ISSN (Print)1949-2081

    Conference

    Conference16th IEEE International Conference on Group IV Photonics, GFP 2019
    Country/TerritorySingapore
    CitySingapore
    Period28/08/1930/08/19

    Keywords

    • Ge
    • heat sink
    • lithography
    • microresonator
    • photoluminescence
    • strain

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