Step bunching on silicon surface under electromigration

S. S. Kosolobov, A. V. Latyshev

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

2 Citations (Scopus)


In situ ultra high vacuum reflection electron microscopy studies of structural and morphological transformations of silicon surface at condition of sample heating by direct electric current are reviewed. The kinetic instability of the diffusion-linked atomic steps affected by electromigration of adsorbed atoms on atomically clean and gold-deposited silicon (111) surface is studied in temperature range between 850 and 1350°C. Consequent changes of the silicon surface morphology during thermal annealing and gold adsorption were observed as reversible redistribution of regular atomic steps to step bunches and vice versa. Peculiarities of the atomic mechanism of the such morphological transitions observed on atomically clean and gold-deposited silicon surface at enhanced temperatures are discussed.

Original languageEnglish
Title of host publicationNanophenomena at Surfaces -Fundamentals of Exotic Condensed Matter Properties
EditorsMichail Michailov
Number of pages20
Publication statusPublished - 2011
Externally publishedYes

Publication series

NameSpringer Series in Surface Sciences
ISSN (Print)0931-5195


Dive into the research topics of 'Step bunching on silicon surface under electromigration'. Together they form a unique fingerprint.

Cite this