Spin-polarization of V GaO N center in GaN and its application in spin qubit

Xiaopeng Wang, Mingwen Zhao, Zhenhai Wang, Xiujie He, Yan Xi, Shishen Yan

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

V GaO N center in cubic gallium nitride is a defect complex composing of a substitutional oxygen atom at nitrogen site (O N) and an adjacent gallium vacancy (V Ga). Based on first-principles calculations, we predicted that this V GaO N center has much in common with the famous nitrogen-vacancy center in diamond, but the excitation energy is very low. The electron spin-polarization of the centers can be tuned by changing the charge states. The neutral O NV Ga center has the v ↓ and e xy ↓ states being well isolated from the bulk bands with appropriate spacing which are suitable for achieving spin qubit operation with low excitation energy.

Original languageEnglish
Article number192401
JournalApplied Physics Letters
Volume100
Issue number19
DOIs
Publication statusPublished - 7 May 2012
Externally publishedYes

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