Spin Polarization of Mn5Ge3 in the Bulk and Thin Films

N. A. Skorikov, V. I. Anisimov

Research output: Contribution to journalArticlepeer-review

Abstract

The intermetallic compound Mn5Ge3 is one of the promising materials for application as a source of charge carriers in spintronics. The existing experimental data on the spin polarization in Mn5Ge3 demonstrate significant discrepancies. All theoretical studies concern a Mn5Ge3 bulk crystal. At the same time, thin films are of interest for applications. In this work, ab initio calculations have been performed for a Mn5Ge3 thin film on a germanium substrate. The difference between the magnetic moments of manganese atoms, densities of states, and spin polarizations for the bulk crystal and thin film has been demonstrated.

Original languageEnglish
Pages (from-to)422-425
Number of pages4
JournalJETP Letters
Volume107
Issue number7
DOIs
Publication statusPublished - 1 Apr 2018
Externally publishedYes

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