Spectroscopy of GaAs/AlGaAs microstructures with submicron spatial resolution using a near-field scanning optical microscope

D. V. Kazantsev, N. A. Gippius, Dzh Oshinovo, A. Forchel'

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A near-field scanning optical microscope (NSOM), which we built, is used to investigate 1-5-μm wide stripes with a 10-nm thick layer - a quantum well - on a GaAs surface. A map of the photoluminescence intensity is obtained synchronously with the topographic profile of the structures. The measured spatial distribution of the photoluminescence intensity is described satisfactorily in a model that takes into account carrier diffusion in the layer and the existence of a region with a short carrier lifetime near the side boundaries of the layer.

Original languageEnglish
Pages (from-to)550-554
Number of pages5
JournalJETP Letters
Volume63
Issue number7
DOIs
Publication statusPublished - 10 Apr 1996
Externally publishedYes

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