Spatially direct recombinations observed in multiples δ-doped GaAs layers

A. Levine, E. C.F. Da Silva, L. M.R. Scolfaro, D. Beliaev, A. A. Quivy, R. Enderlein, J. R. Leite

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Experimental and theoretical studies on n-type multiples δ-doped GaAs layers are reported. Photoluminescence is measured and compared with results of self-consistent electronicstructure calculations. A series of samples with different donor concentrations in the δ-doped layer and a fixed distance between adjacent Si-doped layers (ds = 300 Å) were analysed. The PL spectra of the investigated samples do not show transitions involving confined electronic minibands. However, the full width at half maximum of the observed main emission band may be correlated with the calculated electronic miniband structures.

Original languageEnglish
Pages (from-to)301-306
Number of pages6
JournalSuperlattices and Microstructures
Volume23
Issue number2
DOIs
Publication statusPublished - 1998
Externally publishedYes

Keywords

  • Delta-doping
  • Photoluminescence
  • Superlattices

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