Solution-Based Synthesis of Few-Layer WS2 Large Area Continuous Films for Electronic Applications

Omar A. Abbas, Ioannis Zeimpekis, He Wang, Adam H. Lewis, Neil P. Sessions, Martin Ebert, Nikolaos Aspiotis, Chung Che Huang, Daniel Hewak, Sakellaris Mailis, Pier Sazio

    Research output: Contribution to journalArticlepeer-review

    14 Citations (Scopus)

    Abstract

    Unlike MoS2 ultra-thin films, where solution-based single source precursor synthesis for electronic applications has been widely studied, growing uniform and large area few-layer WS2 films using this approach has been more challenging. Here, we report a method for growth of few-layer WS2 that results in continuous and uniform films over centimetre scale. The method is based on the thermolysis of spin coated ammonium tetrathiotungstate ((NH4)2WS4) films by two-step high temperature annealing without additional sulphurization. This facile and scalable growth method solves previously encountered film uniformity issues. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to confirm the few-layer nature of WS2 films. Raman and X-Ray photoelectron spectroscopy (XPS) revealed that the synthesized few-layer WS2 films are highly crystalline and stoichiometric. Finally, WS2 films as-deposited on SiO2/Si substrates were used to fabricate a backgated Field Effect Transistor (FET) device for the first time using this precursor to demonstrate the electronic functionality of the material and further validate the method.

    Original languageEnglish
    Article number1696
    JournalScientific Reports
    Volume10
    Issue number1
    DOIs
    Publication statusPublished - 3 Feb 2020

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