Si/SiGe: Er/Si structures for laser realization: Theoretical analysis and luminescent studies

M. V. Stepikhova, L. V. Krasil'Nikova, Z. F. Krasil'Nik, V. G. Shengurov, V. Yu Chalkov, S. P. Svetlov, D. M. Zhigunov, V. Yu Timoshenko, P. K. Kashkarov

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11 Citations (Scopus)


In this work we present the results of theoretical calculations and experimental studies carried out for Si/Si1-XGe X: Er/Si heterostructures that show promise as the material for realizing a laser with Si: Er active medium. Analysis of the mode composition and estimation of the degree of electromagnetic wave localization in Si/Si 1-XGeX: Er/Si waveguide structures have been performed for a fairly wide range of values of the Si1- XGeX: Er layer thickness and Ge content. It is shown that a method of sublimation molecular-beam epitaxy in germane gas atmosphere enables growing effective light-emitting structures of Si/Si1- XGeX: Er/Si with the external quantum efficiency to 0.2%. The kinetics analysis of erbium photoluminescence, performed for the test structures, demonstrates the appearance of the population inversion of Er 3+ ion states under optical pumping. The number of Er ions in the inversely populated state comes to about 80% from the total concentration of optically active Er ions at the excitation power density of 4 W/cm2.

Original languageEnglish
Pages (from-to)65-69
Number of pages5
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 2 Feb 2006
Externally publishedYes
EventInternational Conference on Materials for Advanced Technologies -
Duration: 4 Jul 20058 Jul 2005


  • A1. Population inversion
  • A1. Si/SiGe/Si waveguides
  • B1. Er-doped SiGe


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