Single electron transistors as far-infrared photon detectors

O. Astafiev, V. Antonov, T. Kutsuwa, S. Komiyama

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

Single electron transistors (SET) were used to realize high sensitive detection of electromagnetic waves reaching single photon counting level. Far-infrared (FIR) detectors based on two photo-excitation mechanisms in two-dimensional electron gas (2DEG) were fabricated using lithographic techniques. The analysis of the photo-response spectrum suggested the occurance of resonance with maximum at 0.6mm wavelength and half-width of 0.1mm. It was found that the resonance corresponds to a characteristic frequency of the parabolic bare confinement potential.

Original languageEnglish
Pages145-147
Number of pages3
Publication statusPublished - 2001
Externally publishedYes
EventDevice Research Conference (DRC) - Notre Dame, IN, United States
Duration: 25 Jun 200127 Jun 2001

Conference

ConferenceDevice Research Conference (DRC)
Country/TerritoryUnited States
CityNotre Dame, IN
Period25/06/0127/06/01

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