Single- and multilayer Si:Er structures for LED and laser applications grown with sublimation MBE technique

Zakhary F. Krasilnik, Boris A. Andreev, Tom Gregorkievicz, Ludmila V. Krasil'nikova, Viktor P. Kuznetsov, Hanka Przybylinska, Dmitry Yu Remizov, Viacheslav B. Shmagin, Vladimir G. Shengurov, Margarita V. Stepikhova, Victor Yu Timoshenko, Denis M. Zhigunov

Research output: Contribution to journalConference articlepeer-review

Abstract

We present here last results on development and research of Si:Er-based light emitting structures grown with original sublimation molecular beam epitaxy (SMBE) technique. The paper contains a description of the experimental facilities, results of the light emitting media (Si:Er and Si 1-xGex:Er) research and device applications.

Original languageEnglish
Article number61800L
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume6180
DOIs
Publication statusPublished - 2006
Externally publishedYes
EventPhotonics, Devices and Systems III - Prague, Czech Republic
Duration: 8 Jun 200511 Jun 2005

Keywords

  • Erbium-doped silicon
  • Light emitting diodes
  • Luminescence
  • Waveguide and laser structures

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