We present here last results on development and research of Si:Er-based light emitting structures grown with original sublimation molecular beam epitaxy (SMBE) technique. The paper contains a description of the experimental facilities, results of the light emitting media (Si:Er and Si 1-xGex:Er) research and device applications.
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|Publication status||Published - 2006|
|Event||Photonics, Devices and Systems III - Prague, Czech Republic|
Duration: 8 Jun 2005 → 11 Jun 2005
- Erbium-doped silicon
- Light emitting diodes
- Waveguide and laser structures