Si wires growth by using of magnetron sputtering method

S. A. Evlashin, V. A. Krivchenko, P. V. Pastchenko, A. T. Rakhimov, N. V. Suetin, M. A. Timofeyev

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

New method of Si wires synthesis by magnetron sputtering of solid target as a Si source is described. This method is simple, safe and cheaper in comparison with Chemical Vapor Deposition (CVD). Influence of silicon atom flow rates (target sputtering rate) and substrate temperature on the growth of different Si structures were studied. It was found that Si wires have different morphology, which depends on the Si flux and substrate temperature.

Original languageEnglish
Title of host publicationInternational Conference on Micro- and Nano-Electronics 2009
DOIs
Publication statusPublished - 2010
Externally publishedYes
EventInternational Conference on Micro- and Nano-Electronics 2009 - Zvenigorod, Russian Federation
Duration: 5 Oct 20099 Oct 2009

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7521
ISSN (Print)0277-786X

Conference

ConferenceInternational Conference on Micro- and Nano-Electronics 2009
Country/TerritoryRussian Federation
CityZvenigorod
Period5/10/099/10/09

Keywords

  • magnetron sputtering
  • silicon wires
  • Vapor-Liquid-Solid growth
  • whiskers

Fingerprint

Dive into the research topics of 'Si wires growth by using of magnetron sputtering method'. Together they form a unique fingerprint.

Cite this