Semiconductor Lateral Spin Device with Half-Metallic Ferromagnet Electrodes

N. A. Viglin, V. M. Tsvelikhovskaya, S. V. Naumov, A. O. Shorikov, T. N. Pavlov

Research output: Contribution to journalArticlepeer-review

Abstract

Abstract: In a semiconductor spin device with electrodes formed from the Fe2NbSn half-metallic ferromagnet film, a spin polarization of PS = 4% of electrons injected into the InSb semiconductor has been obtained. This corresponds to the maximum possible PS value for transparent contacts of a semiconductor and a ferromagnet, in which the polarization is PF = 95%. It is shown that, to ensure the effective injection of spin-polarized electrons from a ferromagnet into a semiconductor, it is necessary to use a ferromagnet with the 100% electron polarization or to form an additional high-resistance layer in the interface.

Original languageEnglish
Pages (from-to)2301-2304
Number of pages4
JournalPhysics of the Solid State
Volume62
Issue number12
DOIs
Publication statusPublished - Dec 2020
Externally publishedYes

Keywords

  • semiconductors
  • semimetal ferromagnets
  • spin injection
  • spin polarization

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