Selective deposition of carbon nanowalls and investigation of their emission properties Carbon nanowalls on porous silicon and their emission properties

S. Evlashin, V. Borisov, A. Pilevskii, A. Stepanov, N. Suetin, A. Rakhimov

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

In this work we discuss emission characteristics of carbon nanowalls on porous silicon. The samples used were n-type Si 4, 5 Ω cm and p-type Si 3 Ω cm. Surface modifications were made using photoelectrochemical methods. After that, the carbon nanowalls were grown on the substrates using a PECVD method after which the emission characteristics were measured. The carbon nanostructures on porous silicon were grown without additional treatment. These samples show a low emission threshold and a good current density. Different etching regimes were studied. The maximum current density was more than 6 A/cm2.

Original languageEnglish
Title of host publicationProceedings - IVNC 2011
Subtitle of host publication2011 24th International Vacuum Nanoelectronics Conference
Pages129-130
Number of pages2
Publication statusPublished - 2011
Externally publishedYes
Event2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011 - Wuppertal, Germany
Duration: 18 Jul 201122 Jul 2011

Publication series

NameProceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference

Conference

Conference2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011
Country/TerritoryGermany
CityWuppertal
Period18/07/1122/07/11

Keywords

  • Carbon nanowalls
  • Emission properties
  • Porous silicon
  • Selective deposition

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