Scanning near-field optical microscopy of light emitting semiconductor nanostructures

A. V. Ankudinov, A. M. Mintairov, S. O. Slipchenko, A. V. Shelaev, M. L. Yanul, P. S. Dorozhkin, N. V. Vishnyakov

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A technique of cantilever based scanning near-field optical microscopy is applied. Using InP/GaInP quantum dots structures, 100nm (/7) spatial resolution of the technique in illumination-collection regime is tested. The possibility to obtain optical data with a subdiffraction resolution is exploited for clarifying the transversal electric field mode configuration of the radiating semiconductor laser.

Original languageEnglish
Pages (from-to)65-76
Number of pages12
JournalFerroelectrics
Volume477
Issue number1
DOIs
Publication statusPublished - 12 Mar 2015
Externally publishedYes

Keywords

  • atomic force microscopy
  • luminescence
  • quantum dots
  • semiconductor laser
  • SNOM

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