A method of scanning mid-IR-laser microscopy has recently been proposed for the investigation of large-scale electrically and recombination-active defects in semiconductors and nondestructive inspection of semiconductor materials and structures in the industries of microelectronics and photovoltaics. The basis for this development was laid with a wide cycle of investigations on low-angle mid-IR-light scattering in semiconductors. The essence of the technical idea was to apply the dark-field method for spatial filtering of the scattered light in the scanning mid-IR-laser microscope together with the local photoexcitation of excess carriers within a small domain in a studied sample, thus forming an artificial source of scattering of the probe IR light for the recombination contrast imaging of defects. The current paper presents three contrasting examples of application of the above technique for defect visualization in silicon-based materials designed for photovoltaics and photonics which demonstrate that this technique might be an efficient tool for both defect investigation and industrial testing of semiconducting materials.
|Number of pages||5|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 1 Mar 2000|
|Event||8th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors - Narita, Jpn|
Duration: 15 Sep 1999 → 18 Sep 1999