Room temperature near-ir photoluminescence and lasing from self-organized ge QDs formed by ion implantation in silicon

N. S. Balakleiskiy, N. N. Gerasimenko, O. A. Zaporozhan, D. M. Zhigunov, I. V. Sagunova

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report strong IR photoluminescence (PL) in the temperature range of 15 to 300 K as well as morphology measurements in Ge quantum dots (QDs) layer being grown by ion beam implantation (IBI) technique via high temperature annealing for self-organization.

Original languageEnglish
Title of host publicationAdvanced Solid State Lasers, ASSL 2017
PublisherOSA - The Optical Society
ISBN (Electronic)9781557528209
DOIs
Publication statusPublished - 2017
Externally publishedYes
EventAdvanced Solid State Lasers, ASSL 2017 - Nagoya, Japan
Duration: 1 Oct 20175 Oct 2017

Publication series

NameOptics InfoBase Conference Papers
VolumePart F75-ASSL 2017

Conference

ConferenceAdvanced Solid State Lasers, ASSL 2017
Country/TerritoryJapan
CityNagoya
Period1/10/175/10/17

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