Room temperature lasing in injection microdisks with InGaAsN/GaAs quantum well active region

E. I. Moiseev, M. V. Maximov, A. M. Nadtochiy, N. V. Kryzhanovskaya, D. A. Sannikov, T. Yagafarov, M. Kulagina, T. Niemi, R. Isoaho, M. Guina, A. E. Zhukov

    Research output: Contribution to journalConference articlepeer-review

    2 Citations (Scopus)

    Abstract

    Injection microdisk lasers based on three InGaAsN/GaAs quantum wells with different diameters of the resonator were fabricated and studied. Room temperature lasing at 1.2 μm is demonstrated for the first time. Dependence of the threshold current on the diameter is discussed.

    Original languageEnglish
    Article number081048
    JournalJournal of Physics: Conference Series
    Volume1124
    Issue number8
    DOIs
    Publication statusPublished - 2018
    Event5th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Saint Petersburg OPEN 2018 - St. Petersburg, Russian Federation
    Duration: 2 Apr 20185 Apr 2018

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