Resonant tunneling transport in ZnxBe1-xSe/ZnSe/ZnyBe1-ySe asymmetric quantum structures

Vadim P. Sirkeli, Oktay Yilmazoglu, Shihab Al-Daffaie, Ion Oprea, Duu Sheng Ong, Franko Küppers, Hans L. Hartnagel

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

II-VI compounds are promising materials for the fabrication of room-temperature terahertz devices due to their beneficial properties like as type-I conduction band alignment, high breakdown field strength (∼331 kV/cm for ZnSe vs. ∼80 kV/cm for GaAs), and higher values of the conduction band offset (1.5 eV for BeSe/ZnSe vs. 0.7 eV for AlAs/GaAs). In this paper we report on numerical study of the resonant tunneling transport in ZnBeSe/ZnSe/ZnBeSe symmetric and asymmetric resonant tunneling diodes (RTDs). The negative differential resistance feature is observed in the current-voltage characteristics of the ZnSe-based RTDs. It is found that the maximum of peak-to-valley ratio (PVR) of the current density is equal to 6.025 and 7.144 at 150 K, and to 1.120 and 1.105 at 300 K for the symmetric and asymmetric RTDs, respectively. The effect of barrier heights on the frequency and output power performance of RTD devices are studied and discussed.

Original languageEnglish
Title of host publicationNanotechnology VIII
EditorsIon M. Tiginyanu
PublisherSPIE
ISBN (Electronic)9781510609976
DOIs
Publication statusPublished - 2017
Externally publishedYes
EventNanotechnology VIII 2017 - Barcelona, Spain
Duration: 8 May 20179 May 2017

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10248
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceNanotechnology VIII 2017
Country/TerritorySpain
CityBarcelona
Period8/05/179/05/17

Keywords

  • alloy
  • BeSe
  • negative differential resistance
  • Resonant tunneling diodes
  • terahertz emission
  • ZnBeSe
  • ZnSe

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