Resonant Tunneling and Quantum Cascading for Optimum Room-Temperature Generation of THz Signals

Vadim P. Sirkeli, Oktay Yilmazoglu, Duu Sheng Ong, Sascha Preu, Franko Kuppers, Hans L. Hartnagel

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

We report on the results of a numerical study of quantum transport in ZnSe-based resonant-tunneling diodes (RTDs) and quantum cascade oscillators (QCOs) with fixed and unequal barrier heights. It is found that the negative differential resistance exists up to room temperature in the current-voltage characteristics of the RTD and QCO devices with unequal barrier heights. Further, we demonstrate that QCOs with unequal barrier heights have a better frequency and power performance characteristics compared with RTDs and are more beneficial for high-power terahertz generation at room temperature. For the best QCO device with 100 periods of quantum cascading, a maximum output power of 7-9 μW for the operating frequency range from 0.1 to 6 THz at room temperature was achieved.

Original languageEnglish
Article number7968341
Pages (from-to)3482-3488
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume64
Issue number8
DOIs
Publication statusPublished - Aug 2017
Externally publishedYes

Keywords

  • Alloy
  • BeSe
  • MgSe
  • quantum well devices
  • resonant tunneling devices
  • semiconductor devices
  • terahertz (THz) radiation
  • ZnBeSe
  • ZnMgSe
  • ZnSe

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